Novel Ion Bombardment and Plasma Passivation Techniques for Nonvolatile Memory Applications

博士 === 逢甲大學 === 電機與通訊工程博士學位學程 === 102 === As the charge-trapping flash (CTF) memory is scaled down to 1x-nm generation, the lack of storage charges can cause serious reliability problems in high-package density condition, such as data retention, endurance, disturbance, etc. This means the problem of...

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Bibliographic Details
Main Authors: Sheng-hsien Liu, 劉聖賢
Other Authors: Wen-luh Yang
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/8wc696

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