Novel Ion Bombardment and Plasma Passivation Techniques for Nonvolatile Memory Applications
博士 === 逢甲大學 === 電機與通訊工程博士學位學程 === 102 === As the charge-trapping flash (CTF) memory is scaled down to 1x-nm generation, the lack of storage charges can cause serious reliability problems in high-package density condition, such as data retention, endurance, disturbance, etc. This means the problem of...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2013
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Online Access: | http://ndltd.ncl.edu.tw/handle/8wc696 |