A Study on Adjustable Switching Characteristics of Sol-Gel Derived SiO2-based ReRAM
碩士 === 逢甲大學 === 電子工程學系 === 102 === Recently, the requirement of nonvolatile memory increases continuously with the progress of technology products. As the device size is scaled down continuously, the conventional floating-gate flash memory will face the challenge of physical limitation. In the resea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/r68pjt |