Summary: | 碩士 === 逢甲大學 === 自動控制工程學系 === 102 === Thermal management is an important issue for LED packaging. In particular, high power LEDs are subject to high temperatures, which reduce the brightness and alter the color temperature, so external physical sensing devices, such as temperature and photo sensors, and heat dissipation apparatus with control circuits are necessary, to modulate the operating temperature. However, these additions increase packaging volume, integral complexity and cost. To address the above problems, a silicon-based LED packaging module with an integrated RGB color sensor is proposed in this study. The design concept uses MEMS process and monolithic integration technology to fabricate photo sensor with RGB color photoresist on a silicon wafer for the modular packaging with LED. The RGB photo sensors used to detect the brightness and intensity of light source in specified wavelengths, and therefore the optical characterization in this packaging level can be identified for real time control. In which, the photosensitive element and LED carrier structure are directly fabricated on a silicon wafer, using ion doping, color photoresist spin coating and inductively coupled plasma etching, thereby achieving a smart LED packaging module featuring miniaturization, integration and low cost. This method reduces the cost and promotes its applications due to the system in packaging (SIP) at a wafer level. The dimensions of single module were 1×1 cm2; the light source is a 1-watt blue ray LED encapsulated yellow phosphor. Based on above measurement result, the brightness, chromaticity and color temperature of the LED packaging module can be identified during operation process.
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