Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices
碩士 === 中原大學 === 電子工程研究所 === 102 === In the semiconductor industry, non-volatile memory (NVM) applications are extensive, and the relative markets have been well developed. For developing semiconductor NVM devices, the effect and improvement of reliability characteristics play important roles. This w...
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ndltd-TW-102CYCU54280522019-05-15T21:32:14Z http://ndltd.ncl.edu.tw/handle/ne6tp4 Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices 單邊非重疊離子佈植元件之電子捕陷能量分析 Chuan-Sheng Chou 周詮勝 碩士 中原大學 電子工程研究所 102 In the semiconductor industry, non-volatile memory (NVM) applications are extensive, and the relative markets have been well developed. For developing semiconductor NVM devices, the effect and improvement of reliability characteristics play important roles. This work is aimed at investigating the surface states and energy profile of single-side non-overlapped implantation (SNOI) MOSFETs which use the drain-side spacer region to store charges by hot carrier injection. To extract the interface state of energy distribution and trap density, we used the two-level charge pumping method and three-level charge pumping methods for investigating SNOI devices. Based on the charge pumping measurement results, the interface trap and trap energy can be found. Finally, by using the charge pumping method, the energy distribution will shift about 60meV to the shallow site, and the interface trap density will increase to about 2.5x1010 (cm-2eV-1) after the program process. Erik S. Jeng 鄭湘原 2014 學位論文 ; thesis 47 en_US |
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碩士 === 中原大學 === 電子工程研究所 === 102 === In the semiconductor industry, non-volatile memory (NVM) applications are extensive, and the relative markets have been well developed. For developing semiconductor NVM devices, the effect and improvement of reliability characteristics play important roles.
This work is aimed at investigating the surface states and energy profile of single-side non-overlapped implantation (SNOI) MOSFETs which use the drain-side spacer region to store charges by hot carrier injection. To extract the interface state of energy distribution and trap density, we used the two-level charge pumping method and three-level charge pumping methods for investigating SNOI devices. Based on the charge pumping measurement results, the interface trap and trap energy can be found. Finally, by using the charge pumping method, the energy distribution will shift about 60meV to the shallow site, and the interface trap density will increase to about 2.5x1010 (cm-2eV-1) after the program process.
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author2 |
Erik S. Jeng |
author_facet |
Erik S. Jeng Chuan-Sheng Chou 周詮勝 |
author |
Chuan-Sheng Chou 周詮勝 |
spellingShingle |
Chuan-Sheng Chou 周詮勝 Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
author_sort |
Chuan-Sheng Chou |
title |
Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
title_short |
Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
title_full |
Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
title_fullStr |
Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
title_full_unstemmed |
Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
title_sort |
characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices |
publishDate |
2014 |
url |
http://ndltd.ncl.edu.tw/handle/ne6tp4 |
work_keys_str_mv |
AT chuanshengchou characterizationofelectrontrapenergyspectruminsingleendednonoverlappedimplantationdevices AT zhōuquánshèng characterizationofelectrontrapenergyspectruminsingleendednonoverlappedimplantationdevices AT chuanshengchou dānbiānfēizhòngdiélízibùzhíyuánjiànzhīdiànzibǔxiànnéngliàngfēnxī AT zhōuquánshèng dānbiānfēizhòngdiélízibùzhíyuánjiànzhīdiànzibǔxiànnéngliàngfēnxī |
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