| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 102 === In the semiconductor industry, non-volatile memory (NVM) applications are extensive, and the relative markets have been well developed. For developing semiconductor NVM devices, the effect and improvement of reliability characteristics play important roles.
This work is aimed at investigating the surface states and energy profile of single-side non-overlapped implantation (SNOI) MOSFETs which use the drain-side spacer region to store charges by hot carrier injection. To extract the interface state of energy distribution and trap density, we used the two-level charge pumping method and three-level charge pumping methods for investigating SNOI devices. Based on the charge pumping measurement results, the interface trap and trap energy can be found. Finally, by using the charge pumping method, the energy distribution will shift about 60meV to the shallow site, and the interface trap density will increase to about 2.5x1010 (cm-2eV-1) after the program process.
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