The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp

碩士 === 中原大學 === 電子工程研究所 === 102 === Flat Electron Emission Lamp (FEEL) uses gas discharge theory to produce secondary electrons. By electric fields, accelerated electrons impact gas to produce avalanche effect, and then electrons excite anode phosphor to emit light. The key points of FEEL’s luminous...

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Main Authors: Bing-Hao Chen, 陳秉豪
Other Authors: Hui-Kai Zeng
Format: Others
Language:zh-TW
Published: 2014
Online Access:http://ndltd.ncl.edu.tw/handle/675398
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spelling ndltd-TW-102CYCU54280402019-05-15T21:23:54Z http://ndltd.ncl.edu.tw/handle/675398 The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp 氧化物薄膜對平面電子發射光源特性之研究 Bing-Hao Chen 陳秉豪 碩士 中原大學 電子工程研究所 102 Flat Electron Emission Lamp (FEEL) uses gas discharge theory to produce secondary electrons. By electric fields, accelerated electrons impact gas to produce avalanche effect, and then electrons excite anode phosphor to emit light. The key points of FEEL’s luminous efficiency are the number of electrons and the energy of electrons. In the process of ion bombard cathode will damage to thin film and reduce FEEL’s lifetime. Based on gas discharge theory, the species of ion,operation voltage, and cathode materials will affect the factor of secondary electron emission coefficient. This paper will analyze the relation between FEEL and different cathode materials protective layers, and made a series of studies. In this paper, we use Paschen’s Curve to get secondary electron emission coefficients of different cathode materials protective layers. When the FTO conductive thin film as FEEL cathode, the breakdown voltage of FEEL is 3675 V, the luminous efficiency is 0.88 lm/W, the secondary electron emission coefficient is 0.00081. If the thickness of MgO thin films deposited on FTO by sputtering more than 100 nm, the spark will occur and instantaneously damage cathode surface. When the thickness of MgO is reduced to 30 nm, FEEL elements have the best emission characteristics, its breakdown voltage drop of 2850 V, 17.5 times the luminous efficiency, secondary electron emission coefficient increased to 0.11556. If the thickness of STO thin films deposited on FTO III by sputtering is 500 nm, there will not be an instant sparks. When the thickness of STO is reduced to 100 nm, FEEL elements have the best emission characteristics, its breakdown voltage drop of 1450 V, 7.1 times the luminous efficiency, secondary electron emission coefficient increased to 0.0014. Hui-Kai Zeng 鄭慧愷 2014 學位論文 ; thesis 72 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 中原大學 === 電子工程研究所 === 102 === Flat Electron Emission Lamp (FEEL) uses gas discharge theory to produce secondary electrons. By electric fields, accelerated electrons impact gas to produce avalanche effect, and then electrons excite anode phosphor to emit light. The key points of FEEL’s luminous efficiency are the number of electrons and the energy of electrons. In the process of ion bombard cathode will damage to thin film and reduce FEEL’s lifetime. Based on gas discharge theory, the species of ion,operation voltage, and cathode materials will affect the factor of secondary electron emission coefficient. This paper will analyze the relation between FEEL and different cathode materials protective layers, and made a series of studies. In this paper, we use Paschen’s Curve to get secondary electron emission coefficients of different cathode materials protective layers. When the FTO conductive thin film as FEEL cathode, the breakdown voltage of FEEL is 3675 V, the luminous efficiency is 0.88 lm/W, the secondary electron emission coefficient is 0.00081. If the thickness of MgO thin films deposited on FTO by sputtering more than 100 nm, the spark will occur and instantaneously damage cathode surface. When the thickness of MgO is reduced to 30 nm, FEEL elements have the best emission characteristics, its breakdown voltage drop of 2850 V, 17.5 times the luminous efficiency, secondary electron emission coefficient increased to 0.11556. If the thickness of STO thin films deposited on FTO III by sputtering is 500 nm, there will not be an instant sparks. When the thickness of STO is reduced to 100 nm, FEEL elements have the best emission characteristics, its breakdown voltage drop of 1450 V, 7.1 times the luminous efficiency, secondary electron emission coefficient increased to 0.0014.
author2 Hui-Kai Zeng
author_facet Hui-Kai Zeng
Bing-Hao Chen
陳秉豪
author Bing-Hao Chen
陳秉豪
spellingShingle Bing-Hao Chen
陳秉豪
The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
author_sort Bing-Hao Chen
title The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
title_short The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
title_full The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
title_fullStr The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
title_full_unstemmed The Characteristic of Oxide Thin Films on Flat Electron Emission Lamp
title_sort characteristic of oxide thin films on flat electron emission lamp
publishDate 2014
url http://ndltd.ncl.edu.tw/handle/675398
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