The electrical properties of Si-doped AlN thin film by using Helicon sputtering method

• Main Authors: Shu-Han Chang, 張書瀚
• Other Authors: Hui-Ling Kao
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/27588607484581974676

碩士 === 中原大學 === 電子工程研究所 === 102 === Recently, the research of the wide band gap semiconductor is very popular.The wide band gap characteristics of the materials can be applied to deep ultraviolet (UV) LED and detectors. With the widest band gap of 6.2eV among III-Nitrides, AlN also has many merits including the chemical and thermal stability, high thermal conductivity, and anti-radiation characteristics, making it suitable for the development of deep UV and high power devices. In order to broaden the scope of applications, it’s necessary to investigate the doping efficiency of Si in AlN thin film to increase the conductivity and furthermore, to obtain a p-n junction. In this study, the helicon sputtering system was employed to grow the epitaxial Si-doped AlN thin film on sapphire substrate. It has been confirmed that by adjusting the diameter of silicon chips placed on Al target, the doping concentration can be controlled. The aluminum contacts were fabricated on the Si-doped AlN film for the electrical property measurements. The special resistivity of about 10^7~10^8 ohm-cm^2 was obtained by the TLM measurement. The MESA structure was fabricated and the special hall bar electrodes were designed for the four-point measurement to obtain the high resistivity of the film.According to the results, with the doping concentration of 10^20 cm^-3, the resistivity, the electron concentration and the mobility of the Si-doped AlN are about 3.3×10^6 ohm-cm^2, 3.1×10^11 cm^-3 and 6.1 cm^-2/V-s, respectively.