The electrical properties of Si-doped AlN thin film by using Helicon sputtering method
碩士 === 中原大學 === 電子工程研究所 === 102 === Recently, the research of the wide band gap semiconductor is very popular.The wide band gap characteristics of the materials can be applied to deep ultraviolet (UV) LED and detectors. With the widest band gap of 6.2eV among III-Nitrides, AlN also has many merits i...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27588607484581974676 |