| Summary: | 碩士 === 建國科技大學 === 機械工程系暨製造科技研究所 === 102 === Film material is widely used in the semiconductor and photovoltaic industry, especially the development of transparent conductive oxide films more rapidly, At present, transparent conductive film deposited on flexible substrate must be under low temperature, With advantages of small size, light-weight and portability, but film crystallinity would be decreased as well, This results in poor thin films properties This study as a starting point to be made low, the use of reactive ion beam deposition system and deposition of indium oxide molybdenum(Indium molybdenum oxide,IMO) transparent conductive film on the substrate polyether explore different discharge voltage ion source parameters, IMO degree of crystallinity and morphology of the film's effect.
Experiments under conditions fixed chamber pressure, chamber temperature and evaporation deposition rate, changing the discharge voltage ion source parameters, investigate the effect of crystalline films of the IMO, the study showed that: import assisted ion-plated source, adjust discharge the parameters of voltage, as the discharge voltage increases, the crystallinity of the film can be improved, reducing the occurrence of carrier scattering in the grain boundary, when the discharge voltage of the ion beam 110 V, obtained crystalline thin film was 86.3% of the IMO. When the discharge voltage continues to increase, the crystallinity of the film will decrease.
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