Embedded SiGe Source/Drain Induced-Compressive Strain on Low Frequency Noise in 28nm High-K/Metal Gate P-Channel Metal-Oxide-Semiconductor Transistors
碩士 === 正修科技大學 === 電子工程研究所 === 102 === In this work, introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain on low frequency noise (LFN) in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFET). We use high diele...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94482419693221028385 |