Embedded SiGe Source/Drain Induced-Compressive Strain on Low Frequency Noise in 28nm High-K/Metal Gate P-Channel Metal-Oxide-Semiconductor Transistors

• Main Authors: Kai-Shiang Tsai, 蔡凱翔
• Other Authors: San-Lein Wu
• Format: Others
• Language: zh-TW
• Published: 2014
• Online Access: http://ndltd.ncl.edu.tw/handle/94482419693221028385

碩士 === 正修科技大學 === 電子工程研究所 === 102 === In this work, introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain on low frequency noise (LFN) in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFET). We use high dielectric constant material (hafnium oxide ,HfO2) and titanium nitride (TiN) material in barrier layer and metal gate (MG) electrodes to produced P-type metal oxide semiconductor field effect transistor. The introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain in the channel and results in a significant enhancement of pMOSFET performance. The properties of dielectric traps induced by SiGe source/drain (SiGe S/D) induced-compressive stress in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors are demonstrated using random telegraph noise (RTN) and 1/f noise analysis. For pMOSFETs, the DC characteristic, 1/f noise and random telegraph noise results are comparable between with SiGe S/D and without SiGe S/D , indicating that the the strain would improve the device performance.