| Summary: | 碩士 === 正修科技大學 === 電子工程研究所 === 102 === In this work, introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain on low frequency noise (LFN) in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFET). We use high dielectric constant material (hafnium oxide ,HfO2) and titanium nitride (TiN) material in barrier layer and metal gate (MG) electrodes to produced P-type metal oxide semiconductor field effect transistor. The introduction of a SiGe material into source/drain (S/D) regions provides uniaxial compressive strain in the channel and results in a significant enhancement of pMOSFET performance. The properties of dielectric traps induced by SiGe source/drain (SiGe S/D) induced-compressive stress in high-k/metal gate (HK/MG) p-channel metal-oxide-semiconductor field-effect transistors are demonstrated using random telegraph noise (RTN) and 1/f noise analysis.
For pMOSFETs, the DC characteristic, 1/f noise and random telegraph noise results are comparable between with SiGe S/D and without SiGe S/D , indicating that the the strain would improve the device performance.
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