Current-Induced Magnetization Switching in Perpendicularly Anisotropy MagnetizedMgO/CoFeB/Ta
碩士 === 國立中正大學 === 物理學系暨研究所 === 102 === The current-induced switching (CIS) in perpendicular magnetic thin layers and tunnel junctions has recently attracted lots of attention due to the possibility to achieve higher density magnetic random access magnetic memory(MRAM). However, the mechanism of the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2014
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| Online Access: | http://ndltd.ncl.edu.tw/handle/72521932516986474780 |