| Summary: | 碩士 === 吳鳳科技大學 === 光機電暨材料研究所 === 101 === This study discussed the microwave dielectric property of (Mg0.95Ni0.05)(Ti1-xSnx)O3 ceramics of different ratios of x, used different sintering accelerants B2O3, CuO and ZnO to reduce the sintering temperature of (Mg0.95Ni0.05)(Ti1-xSnx)O3, and analyzed the influence on microwave characteristics. The experimental results showed that the original (Mg0.95Ni0.05)TiO3 sintering temperature was 1350℃, the characteristic was εr value =17.35, and the temperature drift coefficient τf value of resonance frequency was -47ppm/℃. This study mixed (Mg0.95Ni0.05)TiO3 with a minute amount of SnO2 to improve its dielectric property, and discussed its characteristics at five sintering temperatures. When the addition of SnO2 was 8mol%, there were good microwave characteristics when the sintering temperature was maintained at 1330℃ for four hours: εr = 23.2389, Q×f value = 9872.685 (at 9GHz), and the temperature drift coefficient τf of resonance frequency was -9.92ppm/℃. In addition, when the sintering temperature was 1270℃ and the addition of sintering accelerant ZnO was 6mol%, there were good microwave characteristics: εr was 23.4754, Q×f value was 4904.105 (at 9GHz), and temperature drift coefficient τf of resonance frequency was -8.77ppm/℃. Compared with (Mg0.95Ni0.05)Ti0.92Sn0.08)O3, the sintering temperature decreased apparently, but the microwave characteristics were slightly different.
This study used FR4, Al2O3 and self-made 0.94(Mg0.95Ni0.05)(Ti0.92Sn0.08)O3-0.06 ZnO as substrate, and made a dual-mode bandpass filter for comparison. The center frequency was set as 3.5GHz, the bandwidth BW = 10% below. The Ansoft HFSS simulation software was used for simulation, and the results were compared with the measured values of FR4, Al2O3 and 0.94 (Mg0.95Ni0.05)(Ti0.92Sn0.08)O3-0.06ZnO bandpass filter. The experiment showed that the self-made 0.94(Mg0.95Ni0.05)(Ti0.92Sn0.08)O3-0.06 ZnO as substrate could reduce the area of filter effectively and result in better frequency response, because the self-made ceramic substrate had higher dielectric constant.
|
|---|
