Properties Investigation and Process Analysis of Indium-Tin Oxide Films

• Main Authors: Jhih-Lin Wang, 王芝琳
• Other Authors: Chin-Bin Lin
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/13625473667952772995

碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 101 === The present study has been successful synthesized the W, Y, Ga and Cs -doped ITO powders by the co-precipitation process and the solvothermal process, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Y -doped ITO powders tended to increase and the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer, but the band-gap energy of Ga and Cs -doped ITO powders tended to decrease and then the spectrums appeared the trends of red-shifted. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Y and Ga -doped ITO powders have no significant effect on the conductivity.