| Summary: | 碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 101 === The present study has been successful synthesized the W, Y, Ga and Cs -doped ITO powders by the co-precipitation process and the solvothermal process, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Y -doped ITO powders tended to increase and the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer, but the band-gap energy of Ga and Cs -doped ITO powders tended to decrease and then the spectrums appeared the trends of red-shifted. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Y and Ga -doped ITO powders have no significant effect on the conductivity.
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