The Study of the Novel Patterned Sapphire Substrate Applied for Enhancing the Efficiency of the GaN-based Light-emitting Diodes
碩士 === 淡江大學 === 化學工程與材料工程學系碩士班 === 101 === We use silicon nitride (Si3N4) to replace silicon dioxide (SiO2) as the reflective index-gradient material to fabricate GaN-based patterned sapphire substrate light-emitting diodes. It can not only reduce the threading dislocations densities but also enha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46285012141703523611 |