Research of Different Nitrogen Concentrations and Annealing Temperatures on BTI Reliability of High-k Stack MOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 101 === Recently, the incorporation of nitrogen (N) in HfO2 gate dielectrics in the annealing process has heavily applied in the advanced MOSFETs because of decreasing equivalent oxide thickness (EOT), improving the breakdown characteristics, and increasing thermal st...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/353r9g |