| Summary: | 碩士 === 南台科技大學 === 光電工程系 === 101 === High-efficiency light-emitting diode (LED) had became the main trends of the present study. In this thesis, we study how to increase light extraction efficiency of light-emitting diode increases. The theoretical basis of the research methods was the total internal reflection (Total Internal Reflection,，TIR) of the grain size was reduced. In order to improve this factor, the chance of the light total reflection was reduced with the roughened structure. Therefore, the patern of the microns array defined on the P-type GaN by photolithography technology, and then the P-GaN surface was etched to reach rough surface effect of the P-GaN by inductively coupled plasma (ICP). We used the simulation software that confirmed the flux light output of the surface micron arrays of the circular pattern could improved about 6%. The LEDs light output power using the surface micron arrays of the circular pattern structure was 6.9% with compare conventional-LEDs.
In the conductive thin film, Indium Gallium Zinc Oxide (IGZO) of transparent conductive film was deposited by the use of electron beam evaporation (E-Beam).The study was measure and analysis of electro-optical characteristics and ohmic contacts of P-GaN at different growth conditions of ZnO films. Finally, we grew this film to gallium nitride (GaN) light-emitting diode devices, and research to explore the differences of the photoelectric characteristics at the different of growth environment. It’s observed that the resistivity of 6.340×10-3 Ω-cm and approximately 84% at 460nm film transmittance via annealing the oxygen (O2).
|
|---|
