| Summary: | 碩士 === 國立虎尾科技大學 === 材料科學與綠色能源工程研究所 === 101 === Tin-doped indium oxide (ITO) is the mostly used material for transparent conductive oxide (TCO) film due to its excellent electrical conductivity (10-4 Ωcm) and visible light transmittance (~80%). However, the problem of high cost and its toxicity prohibited its application in the future. Thus, the alternatives to ITO have been extensively studied. Previous literatures indicates that niobium-doped titanium oxide (TNO) is a versatile material for TCO film, though the studies focused mainly on the optimization of sputtering parameters. The investigation concerning the effect of sputtering targets on the properties of TCO films are rarely found. The aim of this study was thus to study the sintered density, microstructure, crystal structure, and electrical property of TNO and TiO2 ceramic targets.
The results showed that the addition of either 1.5mol% or 3.0 mol% Nb2O5 can attain the high sintered density of 99% and also refine the grain size. Nb2O5 additive was found to be completely dissolved into the rutile of TiO2 and no precipitate could be revealed, as demonstrated in XRD analyses. Furthermore, the resistivity of TiO2 is higher than 108Ωcm. With the addition of Nb2O5, the resistivity of TNO ceramic target is much decreased to102Ωcm. When the inert atmospheres are used, the resistivity of TNO ceramic target is further improved to 10-2 Ωcm. Moreover, the resistivity of TNO target is always inferior to that of TNO film due to the difference of crystal structure.
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