Improved Efficiency of InGaN/GaN Light-emitting Diode Using Silver-doped-textured Zinc Oxide

• Main Authors: Sheng-Jhan Ye, 葉昇展
• Other Authors: 雷伯薰
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/z3f64e

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 101 === In this article, the enhanced efficiency of InGaN/GaN light-emitting diode can be improved by the silver-doped-textured zinc oxide, which was prepared by liquid-phase-deposition method. The treatment solution for deposition of liquid-phase-deposited zinc oxide composed of zinc oxide powder saturated hydrochloric acid, and silver nitride. The deposition temperature was controlled using a temperature-controlled water bath system to maintain at the setting temperature. The atomic force microscope images indicate that the root-mean-square roughness of the silver-doped-textured zinc oxide can be modulated by the silver nitrate concentration and deposition temperature. Silver-doped-textured zinc oxide also shows local surface plasmon effect with the silver nitride concentration and deposition temperature. The silver-doped-textured zinc oxide was then applied to the InGaN/GaN light-emitting diodes to improve the extraction efficiency. InGaN/GaN light emitting diode with the silver-deoped-textured zinc oxide shows higher light output intensity of 143.5 mcd, and narrower emitting spectrum with FWHM of 17.8nm under driving current of 20 mA as compared to those of conventional InGaN/GaN light-emitting diodes.