| Summary: | 碩士 === 國立聯合大學 === 材料科學工程學系碩士班 === 101 === Nanopillars have been suggested to enhance the performance and to reduce the fabrication cost of solar cells by their higher light-trapping area, lower surface reflection and shorter diffusion length for minor carrier. In this thesis, we report a process with I-line lithography to efficiently fabricate nanopillar array with pillar diameter down to less than 400 nm. Various nanostructures including trapezoid, pillar and pencil were obtained by controlling the etching time. In addition, ion implantation was adopted for shallow junction depth, and transparent ITO electrode was used as the conformal top electrode on the surface of nanopillar. To compare the photoelectronic properties of nanostructure, we also prepare a planar device as the reference. The results show that the photoelectronic properties of all the nanostructure are better than that of planar one because of their lower reflectance and enhanced carrier collection efficiency. The efficiency of 1-μm-height nanopillar device was 7.2%, much better than that of planer ITO/Si/Al solar cell (2.1%) in this study.
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