The study of the structures and electrical properties of MgO films fabricated by the e-beam evaporation

• Main Authors: Yi Lin Chen, 陳奕霖
• Other Authors: Chin Chung Yu
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/00330908047251413225

碩士 === 國立高雄大學 === 應用物理學系碩士班 === 101 === In this study, the microstructures and the electrical properties of MgO thin films grown by the e-beam evaporation were investigated. The thesis was divided into two parts. Firstly, MgO thin films were directly deposited on the glass substrates. In a low deposition rate, namely 0.2Å/sec, the diffraction peaks of MgO were not observed in the X-ray diffractions. Maybe the MgO films were in an amorphous state. For the case with a high deposition rate, namely 4Å/sec, the MgO films displayed a cubic halite structure. In the second part of the thesis, a tri-layer structure consisted of Ag/MgO/Ag was fabricated on the Si(111) and Si(100) substrates with different thicknesses of the MgO layer. The Ag layers were used for the top (/bottom) electrodes. The unipolar resistance switching behavior was observed in the Ag/MgO/Ag trilayers with thicknesses of the MgO equal to 200 and 300nm. By analyses of the I-V curves, the behavior of current leakage was mainly dominated by the Schottky Emission and the Poole-Frenkel Emission in the high resistance state. For the low resistance state, an ohmic behavior was observed. On the other hand, the MgO microwires were observed in the AFM images, especially for the thicknesses of the MgO films equal to 200 and 300nm. The formation of MgO microwires was assisted by the Ag bottom layer.