| Summary: | 碩士 === 國立高雄大學 === 應用物理學系碩士班 === 101 === In this study, In2O3 thin films were grown on the glass, Al2O3(0001), Al2O3(11-20) substrates by thermal deposition. There were three different deposition procedures for the growth of In2O3 thin films. The first procedure was a thermal oxidation of In(101) film under oxygen ambient. The oxidized In films, namely In2O3, displayed a (111) preferred orientation.
The second way of the fabrication of In2O3 films was an evaporation of In under oxygen ambient. The obtained In2O3 displayed a polycrystal structure. A relatively smooth surface and a better conductivity of In2O3 films can be achieved in this procedure. For the samples grown at 100oC, pyramidal nanostructures, possibly resulted by the accumulation of In atoms, were observed. For the samples deposition at a temperature higher than 400oC, the In2O3 films displayed hexagonal grains.
At last, a combination of the above two procedures, namely the third method, was used to fabricate the In2O3(111) films. The textured In2O3(111) film made by evaporation of In under oxygen ambient was deposited on an ultrathin thermally oxidized In, that is In2O3(111), seeding layer. In contrast to the first procedure, a smooth surface and a good conductivity of In2O3 film can be obtained in this method. Furthermore, unlike the second method, the (111) texture structure can be persisted also.
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