Preparation and Characterization of HoScOx Thin Films for Resistance Random Access Memory (RRAM) Application
博士 === 國立臺灣科技大學 === 材料科學與工程系 === 101 === The nonvolatile of resistance random access memory (RRAM) is great attracting as a promising candidate for next-generation memory application. In this study, 36 nm-thick of amorphous HoScOx (HSO) films show high potential for RRAM applications because they ha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/81548943096126467092 |