Structure Design of Lateral Insulated-Gate Power Transistors
碩士 === 國立臺灣科技大學 === 電子工程系 === 101 === In this thesis, a new lateral insulated-gate power device has been proposed. The structure design includes bulk-type and SOI-type. The simulation results show that this device achieves a larger on-current than both the power MOSFET and the TFET. The reason is th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80072502603439802453 |