Implementation of a High-Frequency Integrated-Inductor Semi-Bridgeless Power Factor Corrector with Wide Band-Gap Devices

• Main Authors: Kai-Yuan Teng, 鄧凱元
• Other Authors: Yu-Kang Lo
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/34794314949450802472

碩士 === 國立臺灣科技大學 === 電子工程系 === 101 === This thesis aims to study and develop a 500-W semi-bridgeless power factor corrector (PFC) with a switching frequency of 300 kHz. Wide band-gap devices and integrated planar inductor are used to reduce switching losses and the converter size. The presented topology features a high power factor, high efficiency and low current harmonics. Two power switches, CoolMOS and GaN-FET, are applied and their performances are compared. The main circuit is a semi-bridgeless boost converter operated with a fixed switching frequency and average current mode control. Therefore, the input current harmonics are reduced and the input current is forced to be in phase with the input voltage to fulfill the power factor correction function. In this thesis, the integrated inductor design is analyzed and validated. The prototype PFC was implemented with a maximum efficiency up to 98% at 230-Vac line voltage. The THD conforms with IEC61000-3-2, and the PF value is higher than 0.96. Future researches are also mentioned to improve the efficiency and integrity of the circuit, hoping that the developed converter in this thesis can be more practical.