| Summary: | 碩士 === 國立臺灣科技大學 === 光電工程研究所 === 101 === In this dissertation, Nano/Micro crystalline diamond were fabricated on different silicon-based structures to study the effect on the field emission properties. NCD and MCD were deposited on Planar-Si, Pyramid-Si and SiNWs/Pyramid-Si by microwave plasma chemical vapor deposition system. The surface morphologies of diamond were characterized by the field emission scanning electron microscopy. The characterizations of diamond were analyzed by Raman, XPS and AFM to show the quality, the sp3/sp2 ratio and average roughness of diamond, respectively.
It is found that the turn on electric field of NCD/SiNWs/Pyramid-Si field emission cathode is lower (3.11 V/μm) through ultrasonication pretreatment than other structures such as NCD/Planar-Si (4.8 V/μm) and NCD/Pyramid-Si (4.35 V/μm). And the lower turn on electric field NCD/SiNWs/Pyramid-Si (3.2 V/μm) through rub and ultrasonication pretreatments than other structure such as NCD/Pyramid-Si (3.9 V/μm).
While using C10H16 and ethylene glycol as seeds layer to deposite MCD on Planar-Si and Pyramid structures, the turn on field improved from 3.86 V/μm of MCD/Planar-Si to 3.15 V/μm of MCD/Pyramid-Si. And 4.5 V/μm of MCD/Planar-Si to 2.9 V/μm of MCD/Pyramid-Si by using C10H16 and diethylene glycol as seeds layer.
Keyword: NCD, SiNWs, Pyramid
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