The influence of nano-patterned sapphire substrate in InGaN-based light emitting diodes

• Main Authors: Po-Hsun Chen, 陳柏勳
• Other Authors: 管傑雄
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/00096059004548107828

碩士 === 國立臺灣大學 === 電子工程學研究所 === 101 === Growth of GaN-based light-emitting diodes on sapphire substrates , because of the differences between the lattice constant and thermal expansion coefficient , resulting in Quantum-Confined Stark Effect , reducing the LEDs efficiency. Therefore, this paper would like to be contacted by the production of nano-patterned sapphire substrates to explore on the GaN light emitting diodes impacts. I use e-beam lithography system with wet etching techniques to produce different periods, different substrate ratio nanostructures and use of metal organic chemical vapor deposition system for GaN epitaxy . Subsequently confirmed using Raman spectroscopy system to exam epitaxial quality, photoluminescence (PL) system active layer photoluminescence measurements, the last measurement using cryogenic system internal quantum efficiency.