| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === In this thesis, we present the fabrication and characterization of ZnO/GaN and ZnO/Si light-emitting diode (LED) using self-assembled nanosphere lithography and atomic layer deposition (ALD). First, we discuss the theory and process of self-assemble nanosphere lithography, and present the theory of ALD system followed by material analysis. Second, we fabricate and measure the ZnO/GaN LED devices. Third part, we fabricate and measure the ZnO/Si LED devices.
From the PL analysis pumped by a 266nm Nd:YAG solid-state laser, we observed a peak emission wavelength at 383nm with a full width at half maximum (FWHM) of 25nm. Data from the XRD analysis suggest the ZnO film grown by the ALD system to be poly crystalline.
For fabricated the ZnO/GaN LED devices from the current-voltage and the electroluminescence (EL) data, these devices exhibit non-ideal electrical characteristic. The devices emit ultraviolet and visible light under both forwarded and reversed bias, respectively.
For the ZnO/Si LED devices, they exhibit current rectification characterization and have a turn-on voltage of 6V and the devices emit continuous visible light under forward bias. In addition, we fabricated planar type for ZnO LED on (001) and (111) P-Si substrates. We detect five-fold increase in the emission intensity for a 6nm-thick ZnO/Si LED compared with a 3nm-thick ZnO/Si LED.
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