The Development of Non-Equilibrium Quantum Modeling for Transistors

碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === This thesis studies the quantum transport effect. A program has been written with c++ and openCL languages. An overview of the current research is given. As the technology entering a nanoscale world, the classical model can no longer be valid. In the nanoscale...

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Bibliographic Details
Main Authors: Kuang-Chung Wang, 王冠中
Other Authors: Yuh-Renn Wu
Format: Others
Language:en_US
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/78005385945233292948
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Summary:碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === This thesis studies the quantum transport effect. A program has been written with c++ and openCL languages. An overview of the current research is given. As the technology entering a nanoscale world, the classical model can no longer be valid. In the nanoscale simulation, transfer matrix method and Green function method are introduced. The basis functions including the tight binding model and the k.p need to be selected depending on applications. Next, the finite difference method to discretize the simplilfied Schrodinger equation is introduced. To model the quantum transport, the Poisson equation and the Schrodinger hamiltonian are self-consistently iter- ated to get the carrier density, current, and potential in the device. The equationis are listed and discussed. Scattering mechanism was taken into consideration by adding non-hermitian terms in the ma- trix. Last, several device structures are tested, including flat band, pn junction, N-I-N structures, and tunneling structures. Numerical difficulties are also discussed.