Investigation of Carrier Capture and Escape Time in Quantum Well Light-Emitting Transistor
碩士 === 國立臺灣大學 === 光電工程學研究所 === 101 === The Heterojunction Bipolar Light-Emitting Transistors (HBLETs) have become one of the best candidate of next generation optical communication light source because of it’s extremely fast carrier recombination lifetime (~ tens ps) and the characteristics of trans...
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| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38948928348367186815 |