First-Principles Study of Boron Nitride-Doped Graphene
碩士 === 國立臺灣大學 === 物理研究所 === 101 === Boron-nitride (BN) substitutional doping is an efficient way to open a band gap in graphene. In this thesis, the formation of BN domains in graphene and their electronic structures are investigated by performing first-principles calculations. It is found that the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22400539321967718683 |