| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 101 === In this thesis, we use the photoluminescence (PL) measurement to study the optical properties of InxGa1-xN epitaxial layers ( x = 0.020, 0.040, 0.110, 0.150, 0.300 and 0.330) grown by metalorganic chemical vapor deposition ( MOCVD ) and MgxZn1-xO epitaxial layers ( x = 0.033, 0.064, 0.083 and 0.112) grown by molecular beam epitaxy ( MBE ), respectively.
We observe that the full width at half maximum (FWHM) of the PL of the InxGa1-xN and MgxZn1-xO layers increased with increasing indium and magnesium contents, respectively. To further investigate the measured results, the data were analyzed by curve fittings with Schubert’s theoretical calculations.
The results of temperature-dependent PL measurements reveal that, with higher x content in the InxGa1-xN and MgxZn1-xO epitaxial layers, the PL peak energy exhibits the significant S-shape with increasing temperature due to compositional fluctuation and inhomogeneous distribution in the InxGa1-xN and MgxZn1-xO epitaxial layers.
|
|---|
