| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 101 === In this paper, MEMS process technology is used to prepare integrated 128×128 pixels infrared detector. The detector architecture associates pyroelectric thin film and metal oxide semiconductor field effect transistor. Meanwhile, at the oxide layer of gate, double layer Sol-gel composite thin film is used to reduce thermal conductivity and increase the thin film planarity, finally, the sensitivity of the infrared detector is improved.
In the selection of the infrared detector material, in order to achieve the parameter and characteristic of good pyroelectric thin film, target material proportion of Pb0.7Ca0.3TiO3 is adopted, meanwhile, RF magnetron sputtering system is used to deposit pyroelectric thin film on double layer Sol-gel thin film, the depositing parameters are: room temperature, sputtering power of 3.7 W/cm2, pressure of 10 mtorr, and finally, the deposited thin film is annealed to obtain complete thin film.
In the detectors characteristic aspect, this research has measured I-V characteristic curve and obtain gm value of the device to be 259 mS/mm, in the pyroelectric characteristic aspect, at temperature of 122.6 ℃, the measured result shows highest pyroelectric coefficient of 15.4610-4 C/m2K. For Pb0.7Ca0.3TiO3 thin film, the remanent polarization is 55 μC/cm2, and the coercive electric field is 12.5 kV/cm.
In the device response measurement aspect, this experiment has used black body as signal source to measure infrared sensor device, hence, when the response frequency is 1Hz, the maximal voltage response is 1.32x105 V/W, specific detectivity is 5.93x106 cmHz1/2W-1.
|
|---|
