Novel Metallization Technology development Study

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 101 === In this study, we investigated the silver metallization technology and feasibility of Ti-based diffusion barrier for Back-Eend-of-Line (BEOL) interconnect application. A single ALD-TiN film with bi-functional diffusion barrier and plating seed layer was devel...

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Bibliographic Details
Main Authors: Mou-Hong Cheng, 鄭謀鴻
Other Authors: Chao-An Jong
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/91889058132785314137

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