| Summary: | 碩士 === 國立臺南大學 === 電機工程學系碩士班 === 101 === In this study , the n-type Ti-doped ZnO nanorod arrays and the p-type Cu-doped ZnO nanorods arrays were both synthesized on the glass substrate by the Chemical vapor deposition with Vapor-Solid mechanism which of the self-developed the hotwire system assisted the horizontal-tube furnace . When we delay the start-time of the hotwire system , it can process the homogenous PN junction diode (Cu: ZnO / ZnO ) successfully at once time.
In the growth of the Ti-doped ZnO nanorod arrays , we had the good stability for doping at the following parameter : the process temperature at 600oC、the hotwire temperature at 1100oC with the furnace start heating and the pressure at 11 torr . In the growth of the Cu-doped ZnO nanorod arrays , we also had the good stability for doping at the following paremeter : the process temperature at 600oC、the hotwire temperature at 1750oC with the furnace start heating and the pressure at 11torr. The homogenous PN junction diode process also had good stability when the hotwire is open 15 minutes later than the furnace.
In the n-type Ti-doped ZnO nanorod arrays, We measured the electrical properties and made it to gas sensor for different concentrations and substrate temperature conditions to investigate the alcohol gas sensitivity ; In the p-type Cu-doped ZnO nanorod arrays , we made it to photodetector to measure the resistance and used the 365nm UV lamp to discuss its photodetect response . Finally We measured the diode properties from the Cu: ZnO / ZnO homojunction PN diode and try to discuss the possibility of light-emitting.
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