High Temperature Treatment and Post-Annealing Regrowth of Interfacial Layer on Electrical and Material Characteristics in MOS Devies

High Temperature Treatment and Post-Annealing Regrowth of Interfacial Layer on Electrical and Material Characteristics in MOS Devies

碩士 === 國立清華大學 === 工程與系統科學系 === 101

Bibliographic Details
Main Authors:	Liao, Yu-Liang, 廖育諒
Other Authors:	Chang-Liao, Kuei-Shu
Format:	Others
Language:	zh-TW
Published:	2013
Online Access:	http://ndltd.ncl.edu.tw/handle/94938537217697534156

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