Investigation of High-Performance Metal-Insulator-Metal Capacitor Using ZrTiOx/ZrLaOx Stacked Dielectrics

• Main Authors: LIN, YU-BO, 林郁博
• Other Authors: 巫勇賢
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/42268969369234923557

碩士 === 國立清華大學 === 工程與系統科學系 === 101 === Metal-insulator-metal (MIM) capacitors with ZrLaOx/ZrTiOx/ZrLaOx laminate as the insulator were explored in this work. Single ZrTiOx dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high-κ value of 22.5. By integrating this dielectric with ZrLaOx which provides a positive VCC-α and a high κ value of 25.8, the “canceling effect” of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminate structure display desirable characteristics in terms of a capacitance density of 14.6 fF/μm2, a low VCC-α of 33 ppm/V2, negligible frequency dispersion and satisfactory leakage current of 2.5×10-7 A/cm2 at -1 V. These results show that the ZrLaOx/ZrTiOx/ZrLaOx laminate holds the great potential to be applied to next-generation high-performance MIM capacitors.