A Study of Cu/ELK Interconnect Leakage Current Mechanism Leading to TDDB Modeling
碩士 === 國立清華大學 === 電子工程研究所 === 101 === As the semiconductor technology development continues, device and interconnect line spacing are scaling down for achieving density and speed improvements. As the spacing is shrinking, it is accompanied by larger parasitic resistance and capacitance and hence lar...
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| Format: | Others |
| Language: | en_US |
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2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76287119378227352956 |