The study of high k dielectrics and metal gates on Si and III-V semiconductor substrates for the advanced CMOS technology
博士 === 國立清華大學 === 材料科學工程學系 === 101 === Looking beyond the 15 nm node ICs, the consensus is that not only high-κ dielectrics but also appropriate channel material should replace the long-standing SiO2/Si system. The combination of high-κ dielectrics with channel of the III-Vs will have to be integrat...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/87326659377380981542 |