Scanning Tunneling Microscopy Investigation of Impurity Band Electronic Properties in Silicon Supersaturated with Sulfur
碩士 === 國立中山大學 === 物理學系研究所 === 101 === Black silicon has a high visible property and exhibits sub-band gap infrared absorption because impurity band is produced by femtosecond laser with doping high concentrations of sulfur in silicon. To investigate the presence of an impurity band directly and loca...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51083907677187749612 |