| Summary: | 碩士 === 國立中山大學 === 物理學系研究所 === 101 === We use a Ti:Sapphire laser and a Time Correlated Single Photon Counting (TCS PC) system to study the photoluminescence(PL) spectral and time-resolved PL (TRPL) of the m-plane ZnO. The two samples: m-plane ZnO was grown on m-plane Sapphire substrate by Atomic Layer Deposition(ALD) and Sputtering, respectively.
We observed the optical properties by changing the temperature, the wavelength and the polarization of PL. The ZnO have a exciton emission at the UV zone from the PL spectral,and the sample grown by sputtering has a PL at the visible light zone from oxygen-vacancy. We can know the active energy from temperature-dependence PL, and then the donor and acceptor binding energy would be known from active energy.
We found the PL intensity would become stronger as the polarization of laser was perpendicular to c-axis of sample. The lifetime would become longer as the longer wavelength and the lower temperature from TRPL.
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