Nitridation of (001) silicon single crystal under low oxygenatmosphere

• Main Authors: Chen-yueh Chen, 陳振約
• Other Authors: Hong-Yang Lu
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/67590054274490122593

碩士 === 國立中山大學 === 材料與光電科學學系研究所 === 101 === The article is about the nitridation of (001) silicon single crystal under low oxygen atmosphere filled up of N2/H2 at high temperature. We characterized the composition and microstructure of Si3N4 via X-ray Diffractometer, Scanning Electron Microscopy, Transmission Electron Microscopy, and Energy Dispersive Spectrometer. Moreover, the O2 pressure was measured via Zirconia Oxygen Analyzer to know the role of O2 during nitridation. To summarize, this study analyzed the growth mechanisms of α- and β-Si3N4 in different environments, with changing the reaction temperature, reaction time, and additives. To discuss the growth process of α-Si3N4 nanowires, Si3N4-SiO2 core-shell nanowires, Si3N4-SiO2 mixture layer, and β-Si3N4 crystal, our research suggested two models for the nitridation of (001) silicon single crystal under low oxygen atmosphere.