Device applications and characterizations of copper (II) (I) oxide
碩士 === 國立中山大學 === 光電工程學系研究所 === 101 === In this study, copper oxide (I)(II) thin film is prepared by magnetron RF sputtering. The effect of oxygen ratio and RF power during sputtering on the optical, electrical, and surface characteristics of the copper oxide film was discussed. Single phase CuO was...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2013
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44189567634215940920 |
| Summary: | 碩士 === 國立中山大學 === 光電工程學系研究所 === 101 === In this study, copper oxide (I)(II) thin film is prepared by magnetron RF sputtering. The effect of oxygen ratio and RF power during sputtering on the optical, electrical, and surface characteristics of the copper oxide film was discussed. Single phase CuO was formed when the oxygen ratio was up to 20%. Mixed phase cupper oxides including CuO and Cu2O were formed under the condition of oxygen ratio lower than 10% and 12%.Under the condition of 8% oxygen ratio, single phase Cu2O was formed with resistivity of 6x102 Ω–cm and band gap of 2.1eV.
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