| Summary: | 碩士 === 國立屏東科技大學 === 機械工程系所 === 101 === The objective of this experiment is to make a series study of the Ni-Cr-Si-Al-Ta, Ni-Cr-Si-Al-W and Ni-Cr-Si-Al-Ti thin films which are fabricated by DC co-sputtering with rotation targets. In order to obtain different film compositions, there are some parameters are adjusted such as sputtering power, argon gas flow, substrate temperatures and annealing temperatures. The effects of sputtering conditions on the thickness, compositions, microstructures and electrical properties of Ni-Cr-Si-Al-X film are investigated. It found that the as-deposited films are with amorphous structure. Ta2O5 and Ni2SiO4 phases are appeared in the Ni-Cr-Si-Al-Ta films after 500 °C for 6 h annealing, In addition, SiO2 phase isfound in the Ni-Cr-Si-Al-Ti films after 500 °C for 6 h annealing. However, there is still amorphous structure for Ni-Cr-Si-Al-W films after 500 ℃ annealing. The resistivity of Ni-Cr-Si-Al-Ta films is increased with increasing of power and substrate temperature. On the other hand, the resistivity of Ni-Cr-Si-Al-Ta films is decreased with increasing of annealing temperature. When Ni-Cr-Si-Al-Ta films deposited at 100 W and annealed at 300 ℃, itshows that the resistivity is¬¬¬¬ 2381 μΩ-cm with -42.4 ppm/℃ of TCR. The resistivity of Ni-Cr-Si-Al-W films is reduced with increasing of power and increased with increasing of substrate temperature. When Ni-Cr-Si-Al-W films deposited at 100 W andannealed at250 ℃, itshows that the resistivity is¬¬¬¬ 520 μΩ-cm with -6.06 ppm/℃ of TCR. For Ni-Cr-Si-Al-Ti films, the resistivity is enhanced with increasing of power and substrate temperature. When Ni-Cr-Si-Al-Ti films deposited at 150 W andannealed at250 ℃, itshows that the resistivity is¬¬¬¬ 1004 μΩ-cm with 5.09 ppm/℃ of TCR.
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