Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 101 === Diffusion technology is widely used in the semiconductor industry and precision machinery, due to the use of diffusion technology products with high added value, the diffusion techniques and materials are widely used in research and practice, however, the y...

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Main Authors: P.-K. Su, 蘇柏昆
Other Authors: S.-H. Chang
Format: Others
Language:zh-TW
Published: 2013
Online Access:http://ndltd.ncl.edu.tw/handle/58471274051793824631
id ndltd-TW-101NKIMT428017
record_format oai_dc
spelling ndltd-TW-101NKIMT4280172015-10-13T22:24:07Z http://ndltd.ncl.edu.tw/handle/58471274051793824631 Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology 半導體製造技術過程中四氧乙基矽微塵粒子缺陷改進研究 P.-K. Su 蘇柏昆 碩士 國立高雄海洋科技大學 微電子工程研究所 101 Diffusion technology is widely used in the semiconductor industry and precision machinery, due to the use of diffusion technology products with high added value, the diffusion techniques and materials are widely used in research and practice, however, the yield and electrical on the more stringent requirements. This experiment is the use of chemical vapor deposition (Chemical Vapor Deposition), do this process for the four-ox ethyl silicon TEOS (Tetraethoxysilane) from originally L90 L4x of existing requirements more L2x Particles Control shall be set at Level limit from L90 must be less than 38ea can but L2x line width smaller Particles control the Modify to Under 19EA. he advantages of this study is the use of causal relationship, summed up the PA characteristics and patterns, with the process analysis, effectively distinguish between the PA point in time, to achieve the effect of situational analysis. For the results of the analysis of the current situation, pointed out that the emphasis should be parsed due and for direction from the development of experimental methods to prove correct, relative to this exception countermeasures embodiment. The most important is the final results to confirm whether the reach advanced process requirements, as well as the so-called prevention hair ", will all improve practices turn into a knowledge document, experience sharing other Friends of the plant, the use of engineering changes to procedures and operation maintenance specification changes, set given standardized processes. Effect is recognized as follows: particle abnormal rate of 10.3% since before improvement, decreased to 2.3%, improved, improved by as much as 77%. Improve Cycle time 29%, reduce unplanned downtime 37%. WPD improved 18 percent, saving the amount of 12 million machines. Also in the abnormal material Heavy Yield: 5.4% before improvement, reduced to 2% improved, improved by as much as 74%. Heavy material improvement in abnormal quantity, the amount of 1.78 million monthly savings, process engineers to reduce abnormal material handling daily for 2 hours. S.-H. Chang 張順雄 2013 學位論文 ; thesis 78 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 101 === Diffusion technology is widely used in the semiconductor industry and precision machinery, due to the use of diffusion technology products with high added value, the diffusion techniques and materials are widely used in research and practice, however, the yield and electrical on the more stringent requirements. This experiment is the use of chemical vapor deposition (Chemical Vapor Deposition), do this process for the four-ox ethyl silicon TEOS (Tetraethoxysilane) from originally L90 L4x of existing requirements more L2x Particles Control shall be set at Level limit from L90 must be less than 38ea can but L2x line width smaller Particles control the Modify to Under 19EA. he advantages of this study is the use of causal relationship, summed up the PA characteristics and patterns, with the process analysis, effectively distinguish between the PA point in time, to achieve the effect of situational analysis. For the results of the analysis of the current situation, pointed out that the emphasis should be parsed due and for direction from the development of experimental methods to prove correct, relative to this exception countermeasures embodiment. The most important is the final results to confirm whether the reach advanced process requirements, as well as the so-called prevention hair ", will all improve practices turn into a knowledge document, experience sharing other Friends of the plant, the use of engineering changes to procedures and operation maintenance specification changes, set given standardized processes. Effect is recognized as follows: particle abnormal rate of 10.3% since before improvement, decreased to 2.3%, improved, improved by as much as 77%. Improve Cycle time 29%, reduce unplanned downtime 37%. WPD improved 18 percent, saving the amount of 12 million machines. Also in the abnormal material Heavy Yield: 5.4% before improvement, reduced to 2% improved, improved by as much as 74%. Heavy material improvement in abnormal quantity, the amount of 1.78 million monthly savings, process engineers to reduce abnormal material handling daily for 2 hours.
author2 S.-H. Chang
author_facet S.-H. Chang
P.-K. Su
蘇柏昆
author P.-K. Su
蘇柏昆
spellingShingle P.-K. Su
蘇柏昆
Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
author_sort P.-K. Su
title Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
title_short Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
title_full Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
title_fullStr Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
title_full_unstemmed Improving Particle Defect at TEOS Process of Semiconductor Manufacturing Technology
title_sort improving particle defect at teos process of semiconductor manufacturing technology
publishDate 2013
url http://ndltd.ncl.edu.tw/handle/58471274051793824631
work_keys_str_mv AT pksu improvingparticledefectatteosprocessofsemiconductormanufacturingtechnology
AT sūbǎikūn improvingparticledefectatteosprocessofsemiconductormanufacturingtechnology
AT pksu bàndǎotǐzhìzàojìshùguòchéngzhōngsìyǎngyǐjīxìwēichénlìziquēxiàngǎijìnyánjiū
AT sūbǎikūn bàndǎotǐzhìzàojìshùguòchéngzhōngsìyǎngyǐjīxìwēichénlìziquēxiàngǎijìnyánjiū
_version_ 1718076659827998720