Prepration of Cu2ZnSnS4 (CZTS) Solar Cell Materials using a Galvanostat Electro-Deposition Method

• Main Authors: Yu-Jheng Liao, 廖裕正
• Other Authors: Min-Yen Yeh
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/42656595949207943161

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 101 === Since the rise of the environmental awareness in recent years, numerous countries had been very actively searching for an alternate energy source to reduce the amount of pollution to the environment. Among all the renewable energy alternatives, solar energy has green energy indispensability properties. Therefore, this research will study on the preparation of copper-zinc tin sulfide (Cu2ZnSnS4) thin film solar cells materials and its development. Cu2ZnSnS4 is a p-type direct band gap semiconductor material. The material was studied due to its low cost, nontoxic and abundance property. With the band gap value suitable for absorption layers, it is prospective for applications in thin film solar cells. In this study, the preparation of Cu2ZnSnS4 (CZTS) solar cell material is done by galvanostat electro-deposition. Electro-deposition is studied for high quality film production with the advantages of reasonable investment, low-cost materials for deposition rate control, and being able to produce large area thin film regardless of vacuum condition. Cu2ZnSnS4 electro-deposited at 3mA work current in different concentration, re-crystallized, and then treated with sulfurization was analyized. After the experiments with various concentrated reactant in 50cc of DI water, the result shows that under the condition of 3mA current, at room temperature for deposition, 300℃ or above for re-crystallization, and 400℃ for 60 minutes in sulfurization produce the most ideal diffraction peaks for Cu2ZnSnS4 structure obtained.