The Research of Photodetectors Array with Wide Spectral Response

• Main Authors: Jia-Lun Yu, 余佳倫
• Other Authors: Chyi-Da Yang
• Format: Others
• Language: zh-TW
• Published: 2013
• Online Access: http://ndltd.ncl.edu.tw/handle/86584750064183375038

碩士 === 國立高雄海洋科技大學 === 微電子工程研究所 === 101 === Abstract In this thesis, mainly to enhance the wide spectral absorption efficiency and an array 3x3, 4x4 optical detector for the study of the subject, the general InGaAs-InP optical detection of the component, its surface InP cap layer will result in the presence of short-wavelength incident, by this overburden and severe attenuation of light absorbed by the response, resulting in detection of short wavelength band is difficult to extend. Therefore, this research will be designed to InP cap layer inductively coupled plasma etching machine reducing the thickness of InP, and thus enhance the optical detector response at shorter wavelengths, and the development of TiO2 and SiO2 composite anti-reflective layer. In order to reduce the array crosstalk phenomenon, we will used Guard ring with inductively coupled plasma etcher etching separation method to import device process to improve data reliability. The resulting design element has better characteristics: 1 in the reverse bias voltage of 5 V, a low level of leakage current nA; 2 in the design of the antireflective layer composite, 1310 nm conversion efficiency of 95%; 3. wide-spectral detection range, and can in the wavelength range 800 nm-1600 nm of between 60% quantum efficiency. Keywords: Array photodiode, Composite antireflective layer, Crosstalk